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制造商IC编号 | K4T1G164QF-BCE6 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 64MX16 DDR2 |
共通IC编号 | K4T1G164QF-BCE600 |
K4T1G164QF-BCE6000 | |
K4T1G164QF-BCE60000 | |
K4T1G164QF-BCE6: | |
K4T1G164QF-BCE6T | |
K4T1G164QF-BCE6T00 | |
K4T1G164QF-BCE6TCV | |
K4T1G164QFBCE60 |
脚位/封装 | FBGA-84 |
外包装 | TRAY |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | 1280 |
标准外箱 | |
Number Of Words | 64M |
Bit Organization | x16 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 7th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T1G164QF-BCE6 | 5,120 | 索取报价 | |
K4T1G164QF-BCE6000 | 15,825 | 11+ | 索取报价 |
K4T1G164QF-BCE6000 | 6,500 | 索取报价 | |
K4T1G164QF-BCE6 | 86 | 索取报价 | |
K4T1G164QF-BCE6 | 3,280 | 14+ | 索取报价 |
K4T1G164QF-BCE6 | 10,000 | 21+ | 索取报价 |
K4T1G164QF-BCE6 | 1,928 | 12+ | 索取报价 |
K4T1G164QF-BCE6 | 350 | 11+ | 索取报价 |
K4T1G164QF-BCE6 | 249 | 1034+ | 索取报价 |
K4T1G164QF-BCE6 | 5,000 | 11+ | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT47H64M16HR-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3HTR | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3I | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3L | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-3L:E | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR-:3 : H | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR37 | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR3: | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H64M16HR3:G(:H) | FBGA-84 | 1.8 V | 667 MBPS | 0 C~+85 C |