| 脚位/封装 |
TLGA-52
|
| 外包装 |
TRAY
|
| 无铅/环保 |
无铅/环保
|
| 电压(伏) |
2.7V-3.6V
|
| 温度规格 |
-40 C~+85 C
|
| 速度 |
25 NS
|
| 标准包装数量 |
|
| 标准外箱 |
|
| Number Of Words |
2G
|
| Bit Organization |
x8
|
| Density |
16G
|
| Generation |
1st Generation
|
| Pre Prog Version |
None
|
| Classification |
SLC 4 Die Stack
|
| Cust Bad Block |
Include Bad Block
|
| Mode |
Dual nCE & Dual R/nB
|
GENERAL DESCRIPTION
Offered in 1G x 8bit, the K9K8G08U0M is a 8G-bit NAND Flash Memo ry with spare 256M-bit. Its NAND cell provides the most cost-
effective solution for the solid state application marke t. A program operation can be performed in typical 200 µs on the (2K+64)Byte
page and an erase operation can be performed in typical 1.5ms on a (128K+4K)Byte block. Data in the data register can be read out
at 25ns(K9NBG08U5M:50ns) cycle time per Byte. The I/O pins serve as the ports for address and data input/output as well as com-
mand input. The on-chip write controller aut omates all program and erase functions in cluding pulse repetition, where required, and
internal verification and margining of data. Even the writ e-intensive systems can take advantage of the K9K8G08U0M ′s extended
reliability of 100K program/eras e cycles by providing ECC(Error Correc) with real time mapping-out algorithm. The
K9K8G08U0M is an optimum solution for large nonvolatile storage appl ications such as solid state file storage and other portabl e
applications requiring non-volatility.
An ultra high density solution having two 8Gb stacked with twochip selects is also available in standard TSOPI package and another
ultra high density solution having two 16Gb TSOPI package stacked with four chip selects is also available in TSOPI-DSP.
