| MC74HC32ADR2G |
ON-SEMICONDUCTOR/安森美 |
TTL |
263,855
|
TTL / 74HC32 / SOIC-14 / 1 UA / -55 C~+125 C / RoHS / 2.0V~6.0V / TAPE ON REEL / 2500 pcs |
| ESDR0502BT1G |
ON-SEMICONDUCTOR/安森美 |
ESD SUPPRESSOR |
264,000
|
ESD SUPPRESSOR / ESDR0502 / SC75-3 / 1 A / -55 C~+150 C / RoHS / 5.0 V / TAPE ON REEL / 3000 pcs |
| BC847BLT3G |
ON-SEMICONDUCTOR/安森美 |
TRANSISTOR |
1,860,000
|
TRANSISTOR / BC847 / SOT-23-3L / 300 MHZ / -65 C~+150 C / RoHS / 50V / TAPE ON REEL / 10000 pcs |
| ESD9M5.0ST5G |
ON-SEMICONDUCTOR/安森美 |
ESD SUPPRESSOR |
2,640,000
|
ESD SUPPRESSOR / ESD9M5 / SOD-923-2 / 1 A / -55 C~+150 C / RoHS / 5.0 V / TAPE ON REEL / 8000 pcs |
| STTH3R06 |
STM/意法半导体 |
RECTIFIER |
97,200
|
RECTIFIER / 3R06 / THROUGH HOLE / 3 A / -40 C~+175 C / RoHS / 600 V / TAPE ON REEL / 600 pcs |
| BZW50-27 |
STM/意法半导体 |
DIODE |
14,800
|
DIODE / BZW50 / THROUGH HOLE / 1 MHZ / -65 C~+175 C / RoHS / 27 V / TAPE ON REEL |
| IS46DR16640B-25DBLA2 |
ISSI/矽成 |
DDR2 SDRAM |
3,301
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / -40 C~+105 C / RoHS / 1.8 V / TRAY / 209 pcs |
| MAX811LEUS T |
ANALOG DEVICES/ADI/亞德諾 |
VOLTAGE MONITORS |
40,000
|
VOLTAGE MONITORS / MAX811 / SOT-143-4 / 560 MS / -40 C~+85 C / RoHS / 4.63 V / TAPE ON REEL / 2500 pcs |
| PCA9557PW,118 |
NXP/恩智浦 |
INTERFACE |
20,000
|
INTERFACE / PCA9557 / TSSOP-16 / 400 KHZ / -40 C~+85 C / RoHS / 2.3V~5.5V / TAPE ON REEL / 2500 pcs |
| IS43TR16640A-15GBL |
ISSI/矽成 |
DDR3 SDRAM |
13,935
|
DDR3 SDRAM / 64MX16 DDR3 / FBGA-96 / 1333 MBPS / 0 C~+85 C / RoHS / 1.5 V / TRAY / EOL / 1900 pcs |
| LPC1754FBD80551 |
NXP/恩智浦 |
MCU-ARM |
12,852
|
MCU-ARM / LPC1754 / LQFP-80 / 100 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 595 pcs 0.0 kg 35*18*4 cm |
| TSX712IYDT |
STM/意法半导体 |
AMPLIFIER |
37,500
|
AMPLIFIER / TSX712 / SO-8 / 2.7 MHZ / -40 C~+125 C / RoHS / 16 V / TAPE ON REEL / 2500 pcs |
| NUP5120X6T2G |
ON-SEMICONDUCTOR/安森美 |
ARRAY |
520,000
|
ARRAY / NUP5120 / SOT-553-5 / 90 W / -40 C~+125 C / RoHS / 400 V / TAPE ON REEL / 4000 pcs |
| IS42S32160B-7BLI |
ISSI/矽成 |
SDRAM |
2,062
|
SDRAM / 16MX32 SD / FBGA-90 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 2400 pcs |
| IS45S16160D-75ETLA1 |
ISSI/矽成 |
SDRAM |
60,415
|
SDRAM / 16MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 1080 pcs |
| 27C256-12P |
MICROCHIP/微芯 |
EPROM |
352
|
EPROM / 27C256 / DIP-28 / 120 NS / 0 C~+70 C / Leaded / 5.0 V |
| S34ML08G101TFA003 |
SKYHIGH |
FLASH-NAND |
5,000
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| KLMAG1JETD-B041009 |
SAMSUNG/三星 |
FLASH-EMMC |
5,600
|
FLASH-EMMC / 16GB EMMC / FBGA-153 / 52 MHZ / -20 ~+85 / RoHS / 1.8V~3.3V |
| IS42S32800J-7BLI |
ISSI/矽成 |
SDRAM |
2,490
|
SDRAM / 8MX32 SD / BGA-90 / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2400 pcs 2.11 kg 37*9*15 cm |
| K4B2G1646F-BYMAT00 |
SAMSUNG/三星 |
DDR3L SDRAM |
68,000
|
DDR3L SDRAM / 128MX16 DDR3L / FBGA-96 / 1866 MBPS / 0 C~+85 C / RoHS / 1.35V / TAPE ON REEL / 2000 pcs |
| AT45DB321E-SHF-T |
DIALOG/ADESTO/戴樂格 |
DATA FLASH |
30,000
|
DATA FLASH / 45DB321 / SOIC-8 / 85 MHZ / -40 C~+85 C / RoHS / 2.3V-3.6V / TAPE ON REEL / 2000 pcs 0.0 kg 37*35,5*6 cm |
| IS49NLC36800-25EWBLI |
ISSI/矽成 |
RLDRAM2 |
10,146
|
RLDRAM2 / 8MX36 RLD2 / WBGA-144 / 400 MHZ / -40 C~+85 C / RoHS / 1.5V/1.8V / TRAY / 104 pcs |
| EDS1232CASE-1A-E |
MICRON/美光 |
SDRAM |
41,344
|
SDRAM / 4MX32 SD / FBGA-90 / 100 MHZ / 0 C~+70 C / RoHS / 2.5 V / TRAY / 1045 pcs 1.2 kg 37.5*17.5*7.5 cm |
| IS62WV2568BLL-55TLI-TR |
ISSI/矽成 |
SRAM-ASYNC |
40,500
|
SRAM-ASYNC / 256KX8 SRAM / TSOP-32 / 55 NS / -40 C~+85 C / RoHS / 1.65V-3.6V / TAPE ON REEL / 1500 pcs 1.5 kg 36*34*6 cm |
| K4A4G165WF-BCTD0CV |
SAMSUNG/三星 |
DDR4 SDRAM |
640
|
DDR4 SDRAM / 256MX16 DDR4 / FBGA-96 / 2666 MBPS / 0 C~+85 C / RoHS / 1.2V / TRAY / 1120 pcs |