| S34ML02G200BHV000 |
SKYHIGH |
FLASH-NAND |
45,094
|
FLASH-NAND / 256MX8 NAND SLC / BGA-63 / 25 NS / -40 C~+105 C / RoHS / 3.3 V / TRAY / 960 pcs |
| S34ML01G200GHI003 |
SKYHIGH |
FLASH-NAND |
125,000
|
FLASH-NAND / 128MX8 NAND SLC / BGA-67 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2500 pcs |
| S34ML01G200BHB000 |
SKYHIGH |
FLASH-NAND |
14,647
|
FLASH-NAND / 128MX8 NAND SLC / BGA-63 / 25 NS / -40 C~+105 C / RoHS / 3.3 V / TRAY / 960 pcs |
| S34ML01G100BHI003 |
SKYHIGH |
FLASH-NAND |
4,600
|
FLASH-NAND / 128MX8 NAND SLC / BGA-63 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| A2C0169240000 A |
SKYHIGH |
FLASH-NAND |
5,000
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs |
| AT27BV1024-90VC |
MICROCHIP/微芯 |
OTPROM |
4,880
|
OTPROM / 27BV1024 / VSOP-40 / 90 NS / 0 C~+70 C / Leaded / 2.7V~3.6V / TRAY / 1600 pcs 3.0 kg 21*12*35 cm |
| M27C512-45XF1 |
STM/意法半导体 |
EPROM |
4,784
|
EPROM / 27C512 / CDIP-28 / 45 NS / 0 C~+70 C / Leaded / 5.0 V / TUBE / EOL / 260 pcs 3.0 kg 55*9*8 cm |
| IS43R16160D-6BI |
ISSI/矽成 |
DDR1 SDRAM |
6,844
|
DDR1 SDRAM / 16MX16 DDR1 / FBGA-60 / 166 MHZ / -40 C~+85 C / Leaded / 2.5 V |
| 64GB MICRO-SD |
MAJOR |
MEMORY CARD-MICRO-SD |
2,894
|
MEMORY CARD-MICRO-SD / 64GB MICRO-SD / RoHS |
| 16GB MICRO-SD |
MAJOR |
MEMORY CARD-MICRO-SD |
26,587
|
MEMORY CARD-MICRO-SD / 16GB MICRO-SD / RoHS |
| 4GB MICRO-SD |
MAJOR |
MEMORY CARD-MICRO-SD |
3,166
|
MEMORY CARD-MICRO-SD / 4GB MICRO-SD / RoHS |
| 128GB MICRO-SD |
MAJOR |
MEMORY CARD-MICRO-SD |
1,616
|
MEMORY CARD-MICRO-SD / 128GB MICRO-SD / RoHS |
| 256GB MICRO-SD |
MAJOR |
MEMORY CARD-MICRO-SD |
172
|
MEMORY CARD-MICRO-SD / 256GB MICRO-SD / RoHS |
| 32GB MICRO-SD |
MAJOR |
MEMORY CARD-SD |
11,473
|
MEMORY CARD-SD / 32GB MICRO-SD / RoHS |
| 8GB MICRO-SD |
MAJOR |
MEMORY CARD-MICRO-SD |
10,481
|
MEMORY CARD-MICRO-SD / 8GB MICRO-SD / RoHS |
| IS42SM16800H-6BI |
ISSI/矽成 |
SDRAM MOBILE |
3,111
|
SDRAM MOBILE / 8MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / Leaded / 3.3 V / TRAY |
| IS42S32160F-6BLI |
ISSI/矽成 |
SDRAM |
6
|
SDRAM / 16MX32 SD / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / 2400 pcs |
| IS49NLC18160-25WBLI |
ISSI/矽成 |
RLDRAM2 |
72
|
RLDRAM2 / 16MX18 RLD2 / FBGA-144 / 400 MHZ / -40 C~+85 C / RoHS / 1.5V/1.8V / TRAY |
| IS46LD16320A-25BLA25 |
ISSI/矽成 |
LPDDR2 MOBILE |
41,157
|
LPDDR2 MOBILE / 32MX16 LPDDR2 / FBGA-134 / 800 MBPS / -40 C~+105 C / RoHS / 1.14V~1.95 |
| IS45S16320D-6TLA2 |
ISSI/矽成 |
SDRAM |
78
|
SDRAM / 32MX16 SD / TSOP2(54) / 166 MHZ / -40 C~+105 C / RoHS / 3.3 V / TRAY |
| IS43LD32320C-25BLI |
ISSI/矽成 |
LPDDR2 MOBILE |
1,027
|
LPDDR2 MOBILE / 32MX32 LPDDR2 / FBGA-168 / 800 MBPS / -40 C~+85 C / RoHS / 1.2/1.8V / TRAY / 171 pcs |
| IS43DR16160A-37CBLI |
ISSI/矽成 |
DDR2 SDRAM |
9,136
|
DDR2 SDRAM / 16MX16 DDR2 / FBGA-84 / 533 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / 209 pcs |
| IS42SM32160E-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
49
|
SDRAM MOBILE / 16MX32 SD / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS46TR16640CL-107MBLA2 |
ISSI/矽成 |
DDR3L SDRAM |
7
|
DDR3L SDRAM / 64MX16 DDR3L / FBGA-96 / 1866 MBPS / -40 C~+105 C / RoHS / 1.35V / TRAY |
| IS42SM16320E-6BLI |
ISSI/矽成 |
SDRAM MOBILE |
48
|
SDRAM MOBILE / 32MX16 SD / FBGA-54 / 166 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |