圖片僅供參考
製造商IC編號 | K4T1G084QE-HCE6 |
廠牌 | SAMSUNG/三星 |
IC 類別 | DDR2 SDRAM |
IC代碼 | 128MX8 DDR2 |
共通IC編號 | K4T1G084QE-HCE60 |
K4T1G084QE-HCE600 | |
K4T1G084QE-HCE6000 | |
K4T1G084QE-HCE60000 | |
K4T1G084QE-HCE6T | |
K4T1G084QE-HCE6T00 |
脚位/封装 | FBGA-60 |
外包裝 | |
無鉛/環保 | 無鉛/環保 |
電壓(伏) | 1.8 V |
溫度規格 | 0 C~+85 C |
速度 | 667 MBPS |
標準包裝數量 | |
標準外箱 | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
IC 編號 | 脚位/封装 | 電壓(伏) | 速度 | 溫度規格 |
---|---|---|---|---|
HY5PS1G831AFP-Y5-A | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831AFPY5 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831CFP-Y5 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831CFP-Y5-C | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831CFP-Y5/-S6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831CFP-Y5DR-C | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831CFR-Y5-C | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G800BF-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G800C2F-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR81280A-3DBL | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |