Toggle navigation
AB Sunshine Electronics
Distributor for semiconductors
Special Offers
IC Search
Inventory
Goods
Register
Login
English
Deutsch
中文 (简体)
中文 (繁體)
Search
K4E641612C-TI5
Product Overview
Images are for reference only
Manufacturer Part No
K4E641612C-TI5
Brand
SAMSUNG
Item
DRAM
Part No
4MX16 EDO
Alternate Names
K4E641612C-TI50
Product Details
Package
TSOP2(50)
Outpack
RoHS
Leaded
Voltage
5.0 V
Temperature
-40 C~+85 C
Speed
50 NS
Std. Pack Qty
Std. Carton
Number Of Words
4M
Bit Organization
x16
Density
64M
Generation
4th Generation
Power
Normal Power
Available Offers
Description
Qty
Datecode
K4E641612C-TI50
12,000
Get Quote
K4E641612C-TI50
10,000
2003+
Get Quote
K4E641612C-TI50
20,000
2003+
Get Quote
K4E641612C-TI50
19,022
2003+
Get Quote
K4E641612C-TI50
18,200
2003+
Get Quote
K4E641612C-TI50
10,460
03+
Get Quote
FFFE (Form, Fit & Functional Equivalents)
Description
Package
Voltage
Speed
Temperature
K4E661612E-TI50
TSOP2(50)
5.0 V
50 NS
-40 C~+85 C
« First
‹ Prev
1
2
3
4
5