K4E641612C-TI5

Product Overview

IC Picture

Images are for reference only

Manufacturer Part No K4E641612C-TI5
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO
Alternate Names K4E641612C-TI50

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature -40 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Generation 4th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4E641612C-TI50 12,000 Get Quote
K4E641612C-TI50 10,000 2003+ Get Quote
K4E641612C-TI50 20,000 2003+ Get Quote
K4E641612C-TI50 19,022 2003+ Get Quote
K4E641612C-TI50 18,200 2003+ Get Quote
K4E641612C-TI50 10,460 03+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E641612B-TI50 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612C-TP50 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612C-TP50T00 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TI50 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TI50 OR MT4LCM TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TI5000 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TI50T00 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TP50 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TP50000 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TP50T00 TSOP2(50) 5.0 V 50 NS -40 C~+85 C