K4E641612DTI5

Product Overview

IC Picture

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Manufacturer Part No K4E641612DTI5
Brand SAMSUNG
Item DRAM
Part No 4MX16 EDO
Alternate Names K4E641612D-TI50
K4E641612D-TI5000
K4E641612D-TI50T00

Product Details

Package TSOP2(50)
Outpack
RoHS Leaded
Voltage 5.0 V
Temperature -40 C~+85 C
Speed 50 NS
Std. Pack Qty
Std. Carton
Number Of Words 4M
Bit Organization x16
Density 64M
Generation 5th Generation
Power Normal Power

Available Offers

Description Qty Datecode
K4E641612D-TI50 4,000 Get Quote
K4E641612D-TI50 418 2001+ Get Quote
K4E641612D-TI50 12,000 Get Quote
K4E641612D-TI50 10,000 2003+ Get Quote
K4E641612D-TI50 20,000 2003+ Get Quote
K4E641612D-TI50 19,003 2003+ Get Quote
K4E641612D-TI50 20,000 2004+ Get Quote
K4E641612D-TI50 2,000 2005+ Get Quote
K4E641612D-TI50 18,400 2003+ Get Quote
K4E641612D-TI50 5,000 03+ Get Quote

FFFE (Form, Fit & Functional Equivalents)

Description Package Voltage Speed Temperature
K4E641612B-TI50 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612C-TI5 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612C-TI50 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612C-TP50 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612C-TP50T00 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TI50 OR MT4LCM TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TP50 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TP50000 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D-TP50T00 TSOP2(50) 5.0 V 50 NS -40 C~+85 C
K4E641612D50TI TSOP2(50) 5.0 V 50 NS -40 C~+85 C