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Manufacturer Part No | K4T51163QN-BCE7 |
Brand | SAMSUNG |
Item | DDR2 SDRAM |
Part No | 32MX16 DDR2 |
Alternate Names | K4T51163QN-BCE70 |
K4T51163QN-BCE7000 | |
K4T51163QN-BCE70CV | |
K4T51163QN-BCE7T | |
K4T51163QN-BCE7T00 | |
K4T51163QN-BCE7TCV |
Package | FBGA-84 |
Outpack | TRAY |
RoHS | RoHS |
Voltage | 1.8 V |
Temperature | 0 C~+95 C |
Speed | 800 MBPS |
Std. Pack Qty | 1280 |
Std. Carton | |
Number Of Words | 32M |
Bit Organization | x16 |
Density | 512M |
Internal Banks | 4 Banks |
Generation | 14th Generation |
Power | Normal Power |
Description | Qty | Datecode | |
---|---|---|---|
K4T51163QN-BCE7000 | 25,000 | 21+ | Get Quote |
K4T51163QN-BCE7000 | 4,000 | Get Quote | |
K4T51163QN-BCE7000 | 55,848 | Get Quote | |
K4T51163QN-BCE7000 | 2,000 | Get Quote | |
K4T51163QN-BCE7 | 16,000 | Get Quote | |
K4T51163QN-BCE7 | 4,000 | 22+ | Get Quote |
K4T51163QN-BCE70CV | 5,888 | 19+ | Get Quote |
K4T51163QN-BCE70CV | 100,000+ | 2140+ | Get Quote |
K4T51163QN-BCE7000 | 100,000+ | 2137+ | Get Quote |
K4T51163QN-BCE7000 | 3,840 | 21+ | Get Quote |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
K4T51163QQ-BPE70CV | FBGA-84 | 1.8 V | 800 MBPS | -40 C~+85 C |
Description | Package | Voltage | Speed | Temperature |
---|---|---|---|---|
AS4C32M16D2-25BCN | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+95 C |
AS4C32M16D2-25BCNTR | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+95 C |
AS4C32M16D2A-25BCN | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+95 C |
AS4C32M16D2A-25BCNTR | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+95 C |
EDE5116AHBG-8E-E | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+95 C |
EDE5116AHSE-8E- | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+95 C |
EDE5116AHSE-8E-E | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+95 C |
EDE5116AJBG-8E | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+95 C |
EDE5116AJBG-8E-E | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+95 C |
EDE5116AJBG-8E-E NBSP | FBGA-84 | 1.8 V | 800 MBPS | 0 C~+95 C |