图片仅供参考
制造商IC编号 | K4T1G084QE-HCE6 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 128MX8 DDR2 |
共通IC编号 | K4T1G084QE-HCE60 |
K4T1G084QE-HCE600 | |
K4T1G084QE-HCE6000 | |
K4T1G084QE-HCE60000 | |
K4T1G084QE-HCE6T | |
K4T1G084QE-HCE6T00 |
脚位/封装 | FBGA-60 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T1G084QE-HCE6 | 116 | 1104+ | 索取报价 |
K4T1G084QE-HCE6 | 3,840 | 10+ | 索取报价 |
K4T1G084QE-HCE6 | 272 | 10+ | 索取报价 |
K4T1G084QE-HCE6 | 3,840 | 10 | 索取报价 |
K4T1G084QE-HCE6 | 5,660 | 索取报价 | |
K4T1G084QE-HCE6 | 12,500 | 索取报价 | |
K4T1G084QE-HCE6 | 100 | 索取报价 | |
K4T1G084QE-HCE6 | 4,789 | 2012+ | 索取报价 |
K4T1G084QE-HCE6 | 5,000 | 9 | 索取报价 |
K4T1G084QE-HCE6 | 2,440 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
MT47H128M8HQ-37E:G | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8HQ-3: | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8HQ-3:D | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8HQ-3:E | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8HQ-3:E/G | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8HQ-3:G | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8HQ-3:G/E | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8HQ-3:H | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8HQ-3CA | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
MT47H128M8HQ-3CA:E | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |