图片仅供参考
制造商IC编号 | K4T1G084QE-HCE6 |
厂牌 | SAMSUNG/三星 |
IC 类别 | DDR2 SDRAM |
IC代码 | 128MX8 DDR2 |
共通IC编号 | K4T1G084QE-HCE60 |
K4T1G084QE-HCE600 | |
K4T1G084QE-HCE6000 | |
K4T1G084QE-HCE60000 | |
K4T1G084QE-HCE6T | |
K4T1G084QE-HCE6T00 |
脚位/封装 | FBGA-60 |
外包装 | |
无铅/环保 | 无铅/环保 |
电压(伏) | 1.8 V |
温度规格 | 0 C~+85 C |
速度 | 667 MBPS |
标准包装数量 | |
标准外箱 | |
Number Of Words | 128M |
Bit Organization | x8 |
Density | 1G |
Internal Banks | 8 Banks |
Generation | 6th Generation |
Power | Normal Power |
IC 编号 | 数量 | 生产年份 | |
---|---|---|---|
K4T1G084QE-HCE6 | 116 | 1104+ | 索取报价 |
K4T1G084QE-HCE6 | 3,840 | 10+ | 索取报价 |
K4T1G084QE-HCE6 | 272 | 10+ | 索取报价 |
K4T1G084QE-HCE6 | 3,840 | 10 | 索取报价 |
K4T1G084QE-HCE6 | 5,660 | 索取报价 | |
K4T1G084QE-HCE6 | 12,500 | 索取报价 | |
K4T1G084QE-HCE6 | 100 | 索取报价 | |
K4T1G084QE-HCE6 | 4,789 | 2012+ | 索取报价 |
K4T1G084QE-HCE6 | 5,000 | 9 | 索取报价 |
K4T1G084QE-HCE6 | 2,440 | 索取报价 |
IC 编号 | 脚位/封装 | 电压(伏) | 速度 | 温度规格 |
---|---|---|---|---|
HY5PS1G831AFP-Y5-A | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831AFPY5 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831CFP-Y5 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831CFP-Y5-C | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831CFP-Y5/-S6 | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831CFP-Y5DR-C | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HY5PS1G831CFR-Y5-C | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G800BF-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
HYB18TC1G800C2F-3S | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |
IS43DR81280A-3DBL | FBGA-60 | 1.8 V | 667 MBPS | 0 C~+85 C |