| IS43DR81280A-25EBL |
ISSI |
DDR2 SDRAM |
276
|
DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY |
| IS43DR16640A-3DBLI |
ISSI |
DDR2 SDRAM |
502
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 667 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1900 pcs |
| IS43DR16640A-3DBI |
ISSI |
DDR2 SDRAM |
217
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 667 MBPS / -40 C~+125 C / Leaded / 1.8 V / TRAY / 1900 pcs |
| IS43DR16640A-25EBL |
ISSI |
DDR2 SDRAM |
222
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / 1900 pcs |
| IS43DR16320B-3DBI |
ISSI |
DDR2 SDRAM |
24
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 667 MBPS / -40 C~+85 C / Leaded / 1.8 V / TRAY / EOL / 2090 pcs |
| IS43DR16320B-25DBLI |
ISSI |
DDR2 SDRAM |
33
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 2090 pcs 2.0 kg 37*16*9 cm |
| IS43DR16320B-25DBL |
ISSI |
DDR2 SDRAM |
25,674
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 2090 pcs 2.0 kg 37*16*9 cm |
| IC43DR16320E-25DBL |
ISSI |
DDR2 SDRAM |
4,797
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL |
| IC42S16100F-7TL |
ISSI |
SDRAM |
14,487
|
SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL |
| EDS2532AABH-6B-E |
MICRON |
SDRAM |
40,236
|
SDRAM / 8MX32 SD / FBGA-90 / 166 MHZ / 0 C~+70 C / RoHS / 3.3 V / TRAY / 1045 pcs 1.3 kg 37*17.5*8 cm |
| SSL1C471M1012BB |
SAMSUNG |
CAPACITOR |
27,360
|
CAPACITOR / 1C471 / Leaded |
| SK050M0010RT0 |
YAGEO |
CAPACITOR |
18,200
|
CAPACITOR / 050M0010 / Leaded |
| IS42RM32160C-75BL |
ISSI |
SDRAM MOBILE |
1,351
|
SDRAM MOBILE / 16MX32 SD / FBGA-90 / 133 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / EOL |
| EDD2516AETA-5B-E |
MICRON |
DDR1 SDRAM |
16,200
|
DDR1 SDRAM / 16MX16 DDR1 / TSOP2(66) / 200 MHZ / 0 C~+70 C / RoHS / 2.5 V / TAPE ON REEL / 1080 pcs 2.0 kg 38*18*11 cm |
| K4T51163QQ-BCE7000 |
SAMSUNG |
DDR2 SDRAM |
320,740
|
DDR2 SDRAM / 32MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| K6R1008V1D-UI10000 |
SAMSUNG |
SRAM |
11,027
|
SRAM / 128KX8 FAST / TSOP2(32) / 10 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs 2.0 kg 19*38*12 cm |
| K4S281632O-LI75000 |
SAMSUNG |
SDRAM |
12,080
|
SDRAM / 8MX16 SD / TSOP2(54) / 133 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 960 pcs 2.6 kg 19*38*12 cm |
| MX29F800CBMI-70G |
MACRONIX/MXIC |
FLASH-NOR |
5
|
FLASH-NOR / 29F800 BOTTOM / SOP-44 / 70 NS / -40 C~+85 C / RoHS / 5.0 V / TUBE / EOL / 16 pcs |
| MX29F800CTMI-70G |
MACRONIX/MXIC |
FLASH-NOR |
5
|
FLASH-NOR / 29F800 TOP / SOP-44 / 70 NS / -40 C~+85 C / RoHS / 5.0 V / TRAY / EOL / 96 pcs |
| MX25L3206EM2I-12G |
MACRONIX/MXIC |
FLASH-SPI |
26
|
FLASH-SPI / 32MB SPI / SOP-8 / 80 MHZ / -40 C~+85 C / RoHS / 3.3 V / TUBE / 92 pcs |
| AT26DF081ASU |
MICROCHIP |
FLASH-SPI |
195
|
FLASH-SPI / 8MB SPI / SOIC-8 / 70MHZ / -40 C~+85 C / RoHS / 2.7 V |
| SST25VF080B-80-4C-S2AE-T |
MICROCHIP |
FLASH-SPI |
933
|
FLASH-SPI / 8MB SPI / SOIC-8 / 80 MHZ / 0 C~+70 C / RoHS / 2.7V-3.6V / TAPE ON REEL / EOL / 2100 pcs |
| AT25DF161-SH-T |
MICROCHIP |
FLASH-SPI |
10
|
FLASH-SPI / 25DF161 / SOIC-8 / 86 MHZ / -40 C~+125 C / RoHS / 2.7V~3.6V / TAPE ON REEL / EOL / 2000 pcs 1.0 kg 37*35*6 cm |
| AT45DB081E-MHN |
RENESAS |
DATA FLASH |
50
|
DATA FLASH / 45DB081 / UDFN-8 / 85 MHZ / -40 C~+85 C / RoHS / 1.70V~3.6V |
| 24AA64T-I/SN |
MICROCHIP |
EEPROM |
85
|
EEPROM / 24C64 / SOIC-8 / 1 MHZ / -40 C~+85 C / RoHS / 1.70V~5.5V / TAPE ON REEL |