| SFCF1024H2BK2SA-I-M0-513-STD |
SWISSBIT |
MEMORY CARD-CF |
67
|
MEMORY CARD-CF / 1GB CF / RoHS |
| SFCF1024H2BK2SA-C-M0-513-STD |
SWISSBIT |
MEMORY CARD-CF |
95
|
MEMORY CARD-CF / 1GB CF / RoHS |
| SFCF0512H2BK2SA-C-M0-513-STD |
SWISSBIT |
MEMORY CARD-CF |
176
|
MEMORY CARD-CF / 512MB CF / RoHS |
| SFCF0256H3BK1SA-I-M0-513-STD |
SWISSBIT |
MEMORY CARD-CF |
113
|
MEMORY CARD-CF / 256MB CF / RoHS |
| SFCF0256H3BI1SA-I-M0-532-STD |
SWISSBIT |
MEMORY CARD-CF |
57
|
MEMORY CARD-CF / 256MB CF / RoHS |
| SFCF0256H3BI1SA-C-M0-311-STD |
SWISSBIT |
MEMORY CARD-CF |
49
|
MEMORY CARD-CF / 256MB CF / RoHS |
| SFCA16GBH1BR4SA-C-Q1-216-STD |
SWISSBIT |
MEMORY CARD-CF |
55
|
MEMORY CARD-CF / 16GB CF / RoHS |
| K9K8G08U0B-PIB0(ON BOARD) |
SAMSUNG |
FLASH-NAND |
50
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 2.7V-3.6V / OTHER |
| K9F4G08U0A-PCB0(ON BOARD) |
SAMSUNG |
FLASH-NAND |
196
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25 NS / 0 C~+70 C / RoHS / 2.7V-3.6V / OTHER |
| SFSA4096Q1BK2SA-C-Q1-213-STD |
SWISSBIT |
HARD-DISC-FLASH /SSD |
42
|
HARD-DISC-FLASH /SSD / 4GB SSD / RoHS |
| K9F4G08U0B-KIB0(ON BOARD) |
SAMSUNG |
FLASH-NAND |
643
|
FLASH-NAND / 512MX8 NAND SLC / ULGA-52 / 25 NS / -40 C~+85 C / RoHS / 2.7V-3.6V / OTHER |
| AT45DB081D-SUSL954 |
DIALOG/ADESTO |
DATA FLASH |
3,229
|
DATA FLASH / 45DB081 / SOIC-8 / 85 MHZ / -40 C~+85 C / RoHS / 1.70V~3.6V / TUBE |
| K9K8G08U0E-SIB0000 |
SAMSUNG |
FLASH-NAND |
1
|
FLASH-NAND / 1GX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TRAY / EOL / 960 pcs 2.5 kg 38*19*11 cm |
| M25P40-VMN6PB |
MICRON |
FLASH-SPI |
80
|
FLASH-SPI / 4MB SPI / SO-8 / 75MHZ / -40 C~+85 C / RoHS / 3.0V / TUBE / EOL / 2000 pcs 0.2 kg 55*10*2 cm |
| KLM2G1HE3FB001 |
SAMSUNG |
FLASH-EMMC |
26
|
FLASH-EMMC / 2GB EMMC / FBGA-153 / 52 MHZ / -25 C~+85 C / RoHS / 3.3 V / TRAY / 1120 pcs |
| IS43R16160B-6BLI |
ISSI |
DDR1 SDRAM |
5,293
|
DDR1 SDRAM / 16MX16 DDR1 / FBGA-60 / 166 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY / EOL / 1900 pcs |
| MT46H64M32LFCM-5 IT:A |
MICRON |
LPDDR1 MOBILE |
109
|
LPDDR1 MOBILE / 64MX32 LPDDR1 / FBGA-90 / 200 MHZ / -40 C~+85 C / RoHS / 1.8 V |
| MTFC8GLTEA-WT |
MICRON |
FLASH-EMMC |
883
|
FLASH-EMMC / 8GB EMMC / WFBGA-153 / 52 MHZ / -25 C~+85 C / RoHS / 3.3 V / TRAY / EOL |
| EN25QH64-104HIP-TR |
EON/ |
FLASH-SPI |
162
|
FLASH-SPI / 64MB SPI / SOP-8 / 104MHZ / -40 C~+85 C / RoHS / 2.7V~3.6V / TAPE ON REEL |
| IS42SM16160D-7TL-TR |
ISSI |
SDRAM MOBILE |
3,000
|
SDRAM MOBILE / 16MX16 SD / TSOP2(54) / 143 MHZ / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL |
| AT49F512-70TI |
MICROCHIP |
FLASH-NOR |
7,784
|
FLASH-NOR / 49F512 / TSOP-32 / 70 NS / -40 C~+85 C / Leaded / 5.0 V / TRAY / EOL / 1560 pcs 1.5 kg |
| M27C256B70XF1(ROHS) |
STM |
EPROM |
270
|
EPROM / 27C256 / CDIP-28 / 70 NS / 0 C~+70 C / RoHS / 5.0 V / TUBE / EOL / 260 pcs |
| K9F5608R0D-JIB0000 |
SAMSUNG |
FLASH-NAND |
77,880
|
FLASH-NAND / 32MX8 NAND SLC / FBGA-63 / 50 NS / -40 C~+85 C / RoHS / 1.65V-1.95 / TRAY / EOL / 1280 pcs 2.1 kg 38*19*11 cm |
| IS45S16100C1-7TLA1 |
ISSI |
SDRAM |
166
|
SDRAM / 1MX16 SD / TSOP2(50) / 143 MHZ / -40 C~+85 C / RoHS / 3.3 V / TRAY |
| IS46LR32160B-6BLA1 |
ISSI |
LPDDR1 |
48,948
|
LPDDR1 / 16MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY / 2400 pcs |