| M24C64-FMN6TP |
STM |
EEPROM |
85
|
EEPROM / 24C64 / SO-8 / 400 KHZ / -40 C~+85 C / RoHS / 1.60V~5.5V / TAPE ON REEL / 2500 pcs |
| K4T1G164QG-BCE7000 |
SAMSUNG |
DDR2 SDRAM |
29
|
DDR2 SDRAM / 64MX16 DDR2 / FBGA-84 / 800 MBPS / 0 C~+85 C / RoHS / 1.8 V / TRAY / 1280 pcs 2.0 kg 38*19*11 cm |
| K4B1G0846I-BYK0000 |
SAMSUNG |
DDR3L SDRAM |
2
|
DDR3L SDRAM / 128MX8 DDR3L / FBGA-78 / 1600 MBPS / 0 C~+85 C / RoHS / 1.35V / TRAY |
| MT46V64M8P-5B:JTR |
MICRON |
DDR1 SDRAM |
6
|
DDR1 SDRAM / 64MX8 DDR1 / TSOP-66 / 200 MHZ / 0 C~+85 C / RoHS / 2.5 V / TAPE ON REEL / 2000 pcs |
| MT46V32M16CY-5B:J TR |
MICRON |
DDR1 SDRAM |
32
|
DDR1 SDRAM / 32MX16 DDR1 / FBGA-60 / 200 MHZ / 0 C~+70 C / RoHS / 2.5 V / TAPE ON REEL / 2000 pcs |
| MT41K256M8DA-125IT:K |
MICRON |
DDR3L SDRAM |
39
|
DDR3L SDRAM / 256MX8 DDR3L / FBGA-78 / 1600 MBPS / -40 C~+95 C / RoHS / 1.35V / TRAY / 1440 pcs |
| K4T1G084QJ-BIE7000 |
SAMSUNG |
DDR2 SDRAM |
28
|
DDR2 SDRAM / 128MX8 DDR2 / FBGA-60 / 800 MBPS / -40 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1280 pcs 2.0 kg 38*19*11 cm |
| K4M51323PI-HG75000 |
SAMSUNG |
SDRAM-LV MOBILE |
133,170
|
SDRAM-LV MOBILE / 16MX32 SD / FBGA-90 / 133 MHZ / -25 C~+85 C / RoHS / 1.8 V / TRAY / EOL / 1120 pcs 2.4 kg 38*19*11 cm |
| M29DW323DT-70N6 |
MICRON |
FLASH-NOR |
19,508
|
FLASH-NOR / 29DL323 TOP / TSOP-48 / 70 NS / -40 C~+85 C / Leaded / 2.7V~3.6V / TRAY / 576 pcs 1.87 kg 40*20*11 cm |
| SSL470/16 |
SAMSUNG |
CAPACITOR |
240
|
CAPACITOR / SSL470 / Leaded / 240PCS/BAG |
| K4S560832J-LC750JP |
SAMSUNG |
SDRAM |
4,800
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3V/5V / TRAY / 960 pcs |
| K4S560832J-LC75000 |
SAMSUNG |
SDRAM |
28,854
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs |
| K4S560432N-LC75TCV |
SAMSUNG |
SDRAM |
22,000
|
SDRAM / 64MX4 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL |
| K4S280832O-LC75000 |
SAMSUNG |
SDRAM |
13,979
|
SDRAM / 16MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL |
| K6X1008T2D-TF70000 |
SAMSUNG |
SRAM |
26,100
|
SRAM / 128KX8 SRAM / TSOP-32 / 70 NS / -40 C~+85 C / Leaded / 2.7V~3.6V / TRAY / 1440 pcs |
| K9F4008W0A-TCB0000 |
SAMSUNG |
FLASH-NAND |
59,040
|
FLASH-NAND / 512KX8 NAND SLC / TSOP2(40/44) / 120 NS / 0 C~+70 C / Leaded / 3.0V-5.5V / TRAY / 480 pcs |
| K4S560832J-UC75T00 |
SAMSUNG |
SDRAM |
4,000
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / EOL / 2000 pcs 2.4 kg 36*35*7 cm |
| K4S560832J-UC75000 |
SAMSUNG |
SDRAM |
1,244
|
SDRAM / 32MX8 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / EOL |
| K4S560432N-LC75000 |
SAMSUNG |
SDRAM |
5,041
|
SDRAM / 64MX4 SD / TSOP2(54) / 133 MHZ / 0 C~+85 C / RoHS / 3.3 V / TRAY / 960 pcs |
| K4H561638N-LCB3000 |
SAMSUNG |
DDR1 SDRAM |
22,080
|
DDR1 SDRAM / 16MX16 DDR1 / TSOP2(66) / 166 MHZ / 0 C~+85 C / RoHS / 2.5 V / TRAY / 960 pcs |
| K4H561638N-LCB3T00 |
SAMSUNG |
DDR1 SDRAM |
10,000
|
DDR1 SDRAM / 16MX16 DDR1 / TSOP2(66) / 166 MHZ / 0 C~+85 C / RoHS / 2.5 V / TAPE ON REEL / EOL / 2000 pcs |
| MAX2104 |
MAXIM |
TUNER |
400
|
TUNER / MAX2104 / TQFP / Leaded / TRAY |
| S34ML04G100TFI003 |
SKYHIGH |
FLASH-NAND |
1,000
|
FLASH-NAND / 512MX8 NAND SLC / TSOP-48 / 25 NS / -40 C~+85 C / RoHS / 3.3 V / TAPE ON REEL / 1000 pcs 1.0 kg 36*34*7 cm |
| IS42RM16200C-75BLI |
ISSI |
SDRAM MOBILE |
30
|
SDRAM MOBILE / 2MX16 SD / FBGA-54 / 133 MHZ / -40 C~+85 C / RoHS / 2.5 V / TRAY |
| IS43LRR32100C-6BLI |
ISSI |
LPDDR1 MOBILE |
427
|
LPDDR1 MOBILE / 1MX32 LPDDR1 / FBGA-90 / 166 MHZ / -40 C~+85 C / RoHS / 1.8 V / TRAY |